Semiconductor devices and methods of manufacturing

ABSTRACT

A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application No.63/001,912, filed on Mar. 30, 2020, which application is herebyincorporated herein by reference.

BACKGROUND

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components, hence more functions, to be integrated into agiven area. Integrated circuits with high functionality require manyinput/output pads. Yet, small packages may be desired for applicationswhere miniaturization is important.

Fan Out package technology is becoming increasingly popular, in whichintegrated circuits are packaged in packages that typically include aredistribution layer that is used to fan-out wiring for contact pads ofthe package, so that electrical contacts can be made on a larger pitchthan contact pads of the integrated circuit. Such resulting packagestructures provide for high functional density with relatively low costand high performance packages. As the demand for shrinking electronicdevices has grown, a need for smaller and more creative packagingtechniques of semiconductor dies has emerged.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13A, 13B, 13C, 14A, 14B,15A, 15B, 15C, and 16 illustrate cross-sectional views and plan views ofintermediate steps in the formation of a package structure, inaccordance with some embodiments.

FIGS. 17, 18, 19, 20, 21A, 21B, 22, 23, 24, 25, 26A, and 26B illustratecross-sectional views of intermediate steps in the formation of apackage structure, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In this disclosure, various aspects of a package structure and theformation thereof are described. The package structure may be, forexample, a System-in-Package (SiP) device. In some embodiments, thesystem-in-package device may integrate heterogeneous devices integratedon opposing sides of a redistribution structure in a face-to-facearrangement. As such, the package structure may be formed as anasymmetric dual-sided molded package on a multi-layered RDL structure.The package structure may be formed having interconnects that includethrough-molding vias (TMVs) that extend through the molding of one sideto connect to a redistribution structure. Techniques described hereinallow for the interconnects to be formed having a smaller pitch, andthus package structure may be connected to another device using agreater number or density of connections. The interconnects may beformed having a greater pitch without increased risk of bridging orother process defects. Additionally, the techniques described hereinallow for improved flexibility of design, such as exposed devices on oneor both sides of the package structure, different molding materials oneither side of the package structure, different thicknesses on eitherside of the package structure, and smaller allowed interconnect pitch.In some cases, the molding materials or thicknesses may be chosen toreduce or minimize warpage of the package structure, and thus yield orreliability may be improved.

Turning to FIG. 1, there is shown a first carrier substrate 102 on whicha metallization pattern 105 has been formed, in accordance with someembodiments. The metallization pattern 105 may be part of aredistribution structure 112 (see FIG. 2). The first carrier substrate102 may include, for example, silicon-based materials, such as a siliconsubstrate (e.g., a silicon wafer), a glass material, silicon oxide, orother materials, such as aluminum oxide, the like, or a combination. Insome embodiments, the first carrier substrate 102 may be a panelstructure, which may be, for example, a supporting substrate formed froma suitable dielectric material, such as a glass material, a plasticmaterial, or an organic material. The panel structure may be, forexample, a rectangular panel.

In some embodiments, a release layer 103 may be formed on the topsurface of the first carrier substrate 102 to facilitate subsequentdebonding of first carrier substrate 102 (see FIG. 8). The release layer103 may be formed of a polymer-based material, which may be removedalong with the first carrier substrate 102 from the overlying structuresthat will be formed in subsequent steps. In some embodiments, therelease layer 103 is an epoxy-based thermal-release material, whichloses its adhesive property when heated, such as alight-to-heat-conversion (LTHC) release coating. In other embodiments,the release layer 103 may be an ultra-violet (UV) glue, which loses itsadhesive property when exposed to UV lights. The release layer 103 maybe dispensed as a liquid and cured, may be a laminate film laminatedonto the first carrier substrate 102, or may be the like. The topsurface of the release layer 103 may be leveled and may have a highdegree of planarity. In some embodiments, a die attach film (DAF) (notshown) may be used instead of or in addition to the release layer 103.

A dielectric layer 104 may be formed on the release layer 103, in someembodiments. The bottom surface of the dielectric layer 104 may be incontact with the top surface of the release layer 103. In someembodiments, the dielectric layer 104 is formed of a polymer, such aspolybenzoxazole (PBO), polyimide, benzocyclobutene (BCB), or the like.In other embodiments, the dielectric layer 104 is formed of a nitridesuch as silicon nitride; an oxide such as silicon oxide, phosphosilicateglass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass(BPSG), or the like; or the like. The dielectric layer 104 may be formedby any acceptable deposition process, such as spin coating, CVD,laminating, the like, or a combination thereof.

The metallization pattern 105 of the redistribution structure 112 may beformed on the dielectric layer 104. The metallization pattern 105 maycomprise, for example, conductive lines, redistribution layers orredistribution lines, contact pads, or other conductive featuresextending over a major surface of the dielectric layer 104. As anexample to form the metallization pattern 105, a seed layer is formedover the dielectric layer 104. In some embodiments, the seed layer is ametal layer, which may be a single layer or a composite layer comprisinga plurality of sub-layers formed of different materials. In someembodiments, the seed layer comprises a titanium layer and a copperlayer over the titanium layer. The seed layer may be formed using, forexample, physical vapor deposition (PVD) or the like. A photoresist isthen formed and patterned on the seed layer. The photoresist may beformed by spin coating or the like and may be exposed to light forpatterning. The pattern of the photoresist corresponds to themetallization pattern 105. The patterning forms openings through thephotoresist to expose the seed layer. A conductive material is formed inthe openings of the photoresist and on the exposed portions of the seedlayer. The conductive material may be formed by plating, such aselectroplating or electroless plating, or the like. The conductivematerial may comprise a metal, like copper, titanium, tungsten,aluminum, or the like. Then, the photoresist and portions of the seedlayer on which the conductive material is not formed are removed. Thephotoresist may be removed by an acceptable ashing or stripping process,such as using an oxygen plasma or the like. Once the photoresist isremoved, exposed portions of the seed layer are removed, such as byusing an acceptable etching process, such as by wet or dry etching. Theremaining portions of the seed layer and conductive material form themetallization pattern 105. Other techniques of forming the metallizationpattern 105 are possible.

In FIG. 2, additional dielectric layers and metallization patterns(sometimes referred to as redistribution layers or redistribution lines)of the redistribution structure 112 are formed over the dielectric layer104 and the metallization pattern 105, in accordance with someembodiments. The redistribution structure 112 shown in FIG. 2 includesadditional dielectric layers 106, 108, and 110; and additionalmetallization patterns 107, 109, and 111. The redistribution structure112 is shown as an example, and more or fewer dielectric layers andmetallization patterns may be formed in the redistribution structure112. If fewer dielectric layers and metallization patterns are to beformed, some steps and processes discussed below may be omitted. If moredielectric layers and metallization patterns are to be formed, somesteps and processes discussed below may be repeated.

The dielectric layer 106 may be deposited on the dielectric layer 104and the metallization pattern 105. In some embodiments, the dielectriclayer 106 is formed of a polymer, such as polybenzoxazole (PBO),polyimide, benzocyclobutene (BCB), or the like. The polymer may be aphoto-sensitive material that may be patterned using a lithography mask.In other embodiments, the dielectric layer 106 is formed of a nitridesuch as silicon nitride; an oxide such as silicon oxide, phosphosilicateglass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass(BPSG), or the like; or the like. The dielectric layer 106 may be formedby any acceptable deposition process, such as spin coating, CVD,laminating, the like, or a combination thereof. The dielectric layer 106is then patterned to form openings exposing portions of themetallization pattern 105. The patterning may be formed by an acceptableprocess, such as by exposing the dielectric layer 106 to light when thedielectric layer 106 is a photo-sensitive material or by etching using,for example, an anisotropic etch. If the dielectric layer 106 is aphoto-sensitive material, the dielectric layer 106 can be developedafter the exposure.

The metallization pattern 107 may be formed on the dielectric layer 106.As an example to form metallization pattern 107, a seed layer is formedover the dielectric layer 106. A photoresist is then formed andpatterned on the seed layer. The photoresist may be formed by spincoating or the like and may be exposed to light for patterning. Thepattern of the photoresist corresponds to the metallization pattern 107.The patterning forms openings through the photoresist to expose the seedlayer. A conductive material is formed in the openings of thephotoresist and on the exposed portions of the seed layer. Theconductive material may be formed by plating, such as electroplating orelectroless plating, or the like. The conductive material may comprise ametal, like copper, titanium, tungsten, aluminum, or the like. Then, thephotoresist and portions of the seed layer on which the conductivematerial is not formed are removed. The photoresist may be removed by anacceptable ashing or stripping process, such as using an oxygen plasmaor the like. Once the photoresist is removed, exposed portions of theseed layer are removed, such as by using an acceptable etching process,such as by wet or dry etching. The remaining portions of the seed layerand conductive material form the metallization pattern 107. In someembodiments, the metallization pattern 107 has a different size than themetallization pattern 105. For example, the conductive lines and/or viasof the metallization pattern 107 may be wider or thicker than themetallization pattern 105. Further, the metallization pattern 107 may beformed to a greater pitch than the metallization pattern 105.

The remaining dielectric layers (e.g., the dielectric layers 108 and110) and metallization patterns (e.g., the metallization patterns 109and 111) of the redistribution structure 112 may be formed in a similarmanner as the dielectric layer 106 and the metallization pattern 107.The metallization patterns may include one or more conductive elements.The conductive elements may be formed during the formation of themetallization pattern by forming the seed layer and conductive materialof the metallization pattern over a surface of the underlying dielectriclayer and in the opening of the underlying dielectric layer, therebyinterconnecting and electrically coupling various conductive lines.

The metallization pattern 111 is the topmost metallization pattern ofthe redistribution structure 112. As such, all of the intermediatemetallization patterns of the redistribution structure 112 (e.g., themetallization patterns 109 and 107) are disposed between themetallization pattern 111 and the metallization pattern 105. In someembodiments, the metallization pattern 111 has a different size than themetallization patterns 109 and/or 107. For example, the conductive linesand/or vias of the metallization pattern 111 may be wider or thickerthan the conductive lines and/or vias of the metallization patterns 109and/or 107. Further, the metallization pattern 111 may be formed to agreater pitch than the metallization pattern 109 and/or 107.

In some embodiments, the metallization patterns 111 may be under-bumpmetallization structures (UBMs) or may include UBMs of theredistribution structure 112. The UBMs may have bump portions on andextending along the major surface of the dielectric layer 110, and mayhave via portions extending through the dielectric layer 110 tophysically and electrically couple the metallization pattern 109. TheUBMs may be formed of the same material as the metallization pattern109.

Turning to FIG. 3, integrated devices 114 and/or connectors 113 may beattached to the topmost metallization pattern 111 (or UBMs, if present)of the redistribution structure 112, in accordance with someembodiments. The integrated devices 114 may be, for example, asemiconductor device or other device that includes one or more passivedevices such as capacitors, resistors, inductors, and the like. Theintegrated devices 114 may include, for example, an integrated passivedevice (IPD), a Multi-Layer Ceramic Capacitor (MLCC), a voltageregulator, or another type of device. The integrated devices 114attached to the redistribution structure 112 may be similar devices ormay be different types of devices. FIG. 3 illustrates the placement oftwo integrated devices 114, but in other embodiments more or fewerintegrated devices 114 may be attached, and in other embodiments theintegrated devices 114 are not present. The integrated devices 114 maybe attached by, for example, sequentially dipping connectors (e.g.,conductive bumps or pads) of the integrated devices 114 such as solderballs (not shown) into flux, and then using a pick-and-place tool inorder to physically align the connectors of the integrated devices 114with corresponding regions of the redistribution structure 112. In somecases, a reflow process may be performed to bond the connectors of theintegrated devices 114. In some cases, the reflow process may beperformed on both the integrated devices 114 and the connectors 113.

In some embodiments, the connectors 113 are formed on regions of thetopmost metallization pattern 111 (or UBMs, if present) of theredistribution structure 112 to make subsequent connection to one ormore semiconductor devices 116, described below. The connectors 113 maybe formed, for example, by placing solder balls or depositing solderonto regions of the topmost metallization pattern 111. A reflow processmay then be performed, forming the connectors 113. In other embodiments,forming the connectors 113 includes performing a plating step to formsolder layers over regions of the topmost metallization pattern 111. Insome embodiments, the connectors 113 may also include non-solder metalpillars or metal pillars. Solder caps may be formed over the non-soldermetal pillars, which may be formed using plating. In other embodiments,connectors 113 are not formed prior to attachment of the semiconductordevices 116. FIG. 3 illustrates the placement of two integrated devices114, but in other embodiments more or fewer integrated devices 114 maybe attached, and in other embodiments the integrated devices 114 are notpresent.

In FIG. 4, one or more semiconductor devices 116 are attached to theconnectors 113, in accordance with some embodiments. The semiconductordevices 116 may include, for example, a die (e.g., an integrated circuitdie, power integrated circuit die, logic die, or the like), a chip, asemiconductor device, a memory device (e.g., a memory stack, DRAM, Flashmemory, High-Bandwidth Memory (HBM), or the like), another type ofelectronic device, a system-on-a-chip (SoC), a component on a wafer(CoW), a package comprising one or more dies or devices, the like, or acombination thereof. In some embodiments, the semiconductor devices 116may include more than one of the same type of device, or may includedifferent devices. FIG. 4 illustrates the placement of a singlesemiconductor device 116, but in other embodiments two or moresemiconductor devices 116 may be attached.

The semiconductor devices 116 may comprise device connectors forexternal connection to the redistribution structure 112. The deviceconnectors may be, for example, conductive pads or pillars, comprise ametal (e.g., copper) and are mechanically and electrically connected tothe internal components of the semiconductor devices 116. Once formed,the semiconductor devices 116 may be tested and identified as theknown-good-dies (KGD) prior to attachment to the redistributionstructure 112. The semiconductor devices 116 may be attached by, forexample, using a pick-and-place tool in order to physically align thedevice connectors of the semiconductor devices 116 with correspondingconnectors 113. A reflow process may be performed to bond the deviceconnectors to the connectors 113. In some embodiments, the connectors113 are formed on the device connectors of the semiconductor devices 116instead of on the redistribution structure 112. The semiconductordevices 116 may be attached to the redistribution structure 112 beforeattaching the integrated devices 114, in some embodiments. In someembodiments, a semiconductor device 116 has a thickness T1 that is in arange between about 100 μm and about 500 μm.

In FIG. 5, a first encapsulant 118 is formed over the redistributionstructure 112 to encapsulate the integrated devices 114 and thesemiconductor device 116. The first encapsulant 118 may be a moldingcompound such as a resin, epoxy, polyimide, PPS, PEEK, PES, underfill,another material, the like, or a combination thereof. In someembodiments, the first encapsulant 118 may be applied using compressionmolding, transfer molding, or the like, although other applicationtechniques are possible. In some embodiments, the first encapsulant 118is cured. In some embodiments, the first encapsulant 118 has acoefficient of thermal expansion (CTE) in a range between about 10 ppm/Kand about 60 ppm/K. However, the first encapsulant 118 may have anysuitable CTE inside or outside of this example range. In someembodiments, the material of the first encapsulant 118 may be chosen tohave a CTE that reduces or minimizes warpage of a package structure,such as package structure 150 shown in FIG. 15A. For example, thematerial of the first encapsulant 118 may be chosen to have a CTE thatis close to the CTE of the semiconductor device 116 and/or theintegrated devices 114. In this manner, the first encapsulant 118 has aproportional thermal expansion that is similar to that of thesemiconductor device 116 and/or integrated devices 114, and the risk ofcracking or warping may be reduced. In some cases, this can reduce thewarping of the redistribution structure 112 or a package structure 150(see FIGS. 13A-C). In some cases, the material of the first encapsulant118 may be chosen to have a particular CTE based on the CTE of thematerial of the second encapsulant 138, described below for FIG. 11 ingreater detail. In some embodiments, the first encapsulant 118 may havethickness T2 that is in a range between about 150 μm and about 1000 μm.In some embodiments, the first encapsulant 118 is planarized (e.g.,using a CMP and/or grinding process), which may expose at least onesemiconductor device 116. An embodiment including a planarized firstencapsulant 118 with an exposed semiconductor device 116 is describedbelow for FIG. 16.

In FIG. 6, openings 120 are formed in the first encapsulant 118, inaccordance with some embodiments. The openings 120 extend through thefirst encapsulant 118 to expose conductive regions of the redistributionstructure 112. For example, the openings 120 may expose the topmostmetallization pattern (e.g., metallization pattern 111) or UBMs (ifpresent). In some embodiments, the openings 120 may be formed using alaser drilling process. The laser drilling process may include an energyin a range between about 0.1 mJ and about 0.2 mJ, in some embodiments.Other energies may be used. In some embodiments, a cleaning process(e.g., a wet clean) may be performed after the laser drilling process toremove residue. Other techniques may be used for forming the openings120.

The openings 120 may have substantially vertical profile or may have atapered profile, as shown in FIG. 6. For example, in some embodiments,the openings 120 may have a bottom width D1 that is about the same asthe top width D2, or the bottom width D1 may be smaller than the topwidth D2. In some embodiments, the openings 120 may have a bottom widthD1 that is in a range between about 50 μm and about 300 μm and a topwidth D2 that is in a range between about 60 μm and about 360 μm, thoughother widths are possible. In some embodiments, the ratio of D1:D2 maybe between about 1:1 and about 1:1.2, though other ratios are possible.In some cases, forming the openings 120 with a vertical or taperedprofile may allow for improved filling of the openings 120 by conductivematerial 122 (see FIG. 7).

In some embodiments, openings 120 may have a height H1 that is in arange between about 100 μm and about 1500 μm, though other heights arepossible. The openings 120 may have an aspect ratio D1:H1 that is in arange between about 1:8 and about 1:10, though other aspect ratios arepossible. In some cases, forming the openings 120 with a smaller topwidth D2 or a taller aspect ratio D1:H1 (e.g., having a relativelylarger H1) can allow for the openings 120 to be formed having a smallerpitch P1. In some embodiments, the openings 120 may be formed having apitch P1 that is in a range between about 100 μm and about 250 μm,though other pitches are possible. In some cases, the shape, size, oraspect ratio of the openings 120 may be controlled by controlling thecharacteristics (e.g., power, area, duration, etc.) of the laserdrilling process. In this manner, the subsequently formed interconnects144 (see FIGS. 13A-C) may be formed having a smaller width or a smallerpitch, and thus the techniques herein can allow for a greater density ofinterconnects 144 to be formed on a side of a package structure (e.g.,the package structure 150 of FIGS. 13A-C). Other widths, dimensions,aspect ratios, or profiles are possible.

Turning to FIG. 7, conductive material 122 is deposited into theopenings 120, in accordance with some embodiments. The conductivematerial 122 in the openings 120 makes physical and electrical contactwith the topmost metallization pattern (e.g., metallization pattern 111)or UBMs (if present) of the redistribution structure 112. The conductivematerial 122 may extend partially or fully through the first encapsulant118. In some cases, the conductive material 122 within the openings 120may be considered through-molding vias (TMVs). In some embodiments, theconductive material 122 may comprise a conductive paste such as solderpaste, silver paste, silver glue or adhesive, the like, or combinationsthereof. The conductive material 122 may be deposited using, forexample, a suitable dispensing process or a printing process. A reflowmay be performed after depositing the conductive material 122.

In some embodiments, conductive material 122 may have a height H2 thatis in a range between about 100 μm and about 1500 μm, though otherheights are possible. For example, the height H2 may be based on theheight H1 of the openings 120, and the height H2 may be greater than,about the same as, or less than the height H1. The conductive material122 may partially fill the openings 120 or may completely fill theopenings 120. Accordingly, a top surface of the conductive material 122may be below a top surface of the first encapsulant 118, may be aboutlevel with a top surface of the first encapsulant 118, or may protrudeabove a top surface of the first encapsulant 118. For example, a topsurface of the conductive material 122 may be below a top surface of thefirst encapsulant 118 a distance in a range between about 30 μm andabout 100 μm or a top surface of the conductive material 122 may beabove a top surface of the first encapsulant 118 a distance in a rangebetween about 30 μm and about 100 μm. Other distances are possible. Thetop surface of the conductive material 122 may be concave, substantiallyflat, convex, or have another shape.

In FIG. 8, a carrier substrate de-bonding is performed to detach (or“de-bond”) the first carrier substrate 102 from the redistributionstructure 112 (e.g., the dielectric layer 106), in accordance with someembodiments. The de-bonding may include projecting a light such as alaser light or an UV light on the release layer 103 so that the releaselayer 103 decomposes under the heat of the light and the first carriersubstrate 102 can be removed. The structure may then flipped be over andattached to a second carrier substrate 130. The second carrier substrate130 may be a carrier substrate similar to those described above for thefirst carrier substrate 102. A release layer 132 may be formed on thesecond carrier substrate 130 to facilitate attachment of the structureto the second carrier substrate 130. The release layer 132 may besimilar to the release layer 103 described previously. For example, insome embodiments, the release layer 132 may be a DAF or the like.

In FIG. 9, conductive connectors 134 are formed on the redistributionstructure 112, in accordance with some embodiments. The conductiveconnectors 134 make physical and electrical contact with the bottommetallization pattern (e.g., metallization pattern 105) of theredistribution structure 112. The dielectric layer 104 may be removed,for example, using a suitable etching process. In other embodiments,portions of the dielectric layer 104 are left remaining after formingthe conductive connectors 134. In some embodiments, the conductiveconnectors 134 are formed by forming openings through the dielectriclayer 104 to expose portions of the metallization pattern 105. Theopenings may be formed, for example, using laser drilling, etching, orthe like. The conductive connectors 134 are then formed in the openingsin the dielectric layer 104. The remaining portions of the dielectriclayer 104 may be left remaining on the redistribution structure 112 ormay be removed after forming the conductive connectors 134. In someembodiments, the dielectric layer 104 is removed before forming theconductive connectors 134. The dielectric layer 104 or portions thereofmay be removed using, for example, a suitable etching process.

In some embodiments, a pre-solder printing process may be performed onthe metallization pattern 105 prior to forming the conductive connectors134 on the metallization pattern 105. The conductive connectors 134 maybe, for example, ball grid array (BGA) connectors, solder balls, metalpillars, controlled collapse chip connection (C4) bumps, micro bumps,electroless nickel-electroless palladium-immersion gold technique(ENEPIG) formed bumps, or the like. The conductive connectors 134comprise a conductive material such as solder, copper, aluminum, gold,nickel, silver, palladium, tin, the like, or a combination thereof. Insome embodiments, the conductive connectors 134 are formed by initiallyforming a layer of solder through evaporation, electroplating, printing,solder transfer, ball placement, or the like. Once a layer of solder hasbeen formed on the structure, a reflow may be performed in order toshape the material into the desired bump shapes. In some embodiments,the conductive connectors 134 comprise flux and are formed, for example,using a flux dipping process. In some embodiments, the conductiveconnectors 134 comprise a conductive paste such as solder paste, silverpaste, or the like, and are dispensed in a printing process. In anotherembodiment, the conductive connectors 134 comprise metal pillars (suchas a copper pillar) formed by a sputtering, printing, electro plating,electroless plating, CVD, or the like. The metal pillars may be solderfree and have substantially vertical sidewalls. In some embodiments, ametal cap layer is formed on the top of the metal pillars. The metal caplayer may include nickel, tin, tin-lead, gold, silver, palladium,indium, nickel-palladium-gold, nickel-gold, the like, or a combinationthereof and may be formed by a plating process. In some embodiments, theconductive connectors 134 are formed in a manner similar to theconnectors 113, and may be formed of a similar material as theconnectors 113. Other materials or techniques are possible.

In FIG. 10, one or more integrated devices 136 are attached to theconductive connectors 134, in accordance with some embodiments. Theintegrated devices 136 are electrically connected to the redistributionstructure 112 by the conductive connectors 134. The integrated devices136 may be, for example, a semiconductor device, electronic component,or other device that includes one or more passive devices such ascapacitors, resistors, inductors, and the like. In some embodiments, theintegrated devices 136 may be IPDs, MLCCs, surface-mount devices (SMDs),or the like. The integrated devices 136 attached to the redistributionstructure 112 may be similar devices or may be different types ofdevices, and may have similar dimensions or different dimensions. FIG.10 illustrates the placement of seven integrated devices 136, but moreor fewer of integrated devices 136 may be attached in other embodiments.The integrated devices 136 may be attached by, for example, sequentiallydipping connectors (e.g., conductive bumps or pads) of the integrateddevices 136 into flux, and then using a pick-and-place tool in order tophysically align the connectors of the integrated devices 136 withcorresponding conductive connectors 134. In some cases, a reflow processmay be performed to bond the connectors of the integrated devices 136 tothe conductive connectors 134.

In some embodiments, an optional underfill (not shown) is formed betweeneach of the integrated devices 136 and the redistribution structure 112,surrounding the connectors of the integrated devices 136 and thecorresponding conductive connectors 134. The optional underfill mayreduce stress and protect the joints from damage resulting from thereflow process. The optional underfill may be formed, for example, by acapillary flow process after the integrated devices 136 are attached orby a suitable deposition method before the integrated devices 136 areattached. In some embodiments in which a flux is used to attach theintegrated devices 136, the flux may act as the optional underfill.

In FIG. 11, a second encapsulant 138 is formed over the redistributionstructure 112 to encapsulate the integrated devices 136. The secondencapsulant 138 may be a molding compound such as a resin, epoxy,polyimide, PPS, PEEK, PES, underfill, another material, the like, or acombination thereof. In some embodiments, the second encapsulant 138 maybe applied using compression molding, transfer molding, or the like,although other application techniques are possible. In some embodiments,the second encapsulant 138 is cured. In some embodiments, the secondencapsulant 138 is a material similar to that of the first encapsulant118, and may be formed using a similar technique.

In some embodiments, the second encapsulant 138 has a coefficient ofthermal expansion (CTE) in a range between about 10 ppm/K and about 80ppm/K. However, the second encapsulant 138 may have any suitable CTEinside or outside of this example range. In some embodiments, thematerial of the second encapsulant 138 may be chosen to have a CTE thatreduces or minimizes warpage of a package structure, such as packagestructure 150 shown in FIGS. 13A-C. For example, the material of thesecond encapsulant 138 may be chosen to have a CTE that is close to theCTE of one or more of the integrated devices 136. In this manner, thesecond encapsulant 138 has a proportional thermal expansion that issimilar to that of the integrated devices 136, and the risk of crackingor warping may be reduced. In some cases, this can reduce the warping ofthe redistribution structure 112 or a package structure 150 (see FIGS.13A-C). In some cases, having a structure on a first side of aredistribution structure that expands differently than the structure onthe opposite side of the redistribution structure can cause warping, asthe lateral stress on the first side may be different than the lateralstress on the opposite side. In this manner, having similar overall CTEsof the encapsulant and devices on both sides of the redistributionstructure 112 can reduce warping. In some cases, the material of thesecond encapsulant 138 may be chosen to have a particular CTE based onthe CTE of the material of the first encapsulant 118. For example, thematerial of the second encapsulant 138 may be chosen such that theoverall CTE of the second encapsulant 138 and the integrated devices 136is more similar to the overall CTE of the first encapsulant 118, thedevices 114, and the semiconductor device 116. The material of the firstencapsulant 118 may be chosen in a similar manner to more closely matchthe overall CTE of the second encapsulant 138 and the integrated devices136.

In some embodiments, the second encapsulant 138 is planarized (e.g.,using a CMP and/or grinding process), which may expose at least oneintegrated device 136. In some embodiments, the second encapsulant 138may have a thickness T3 that is in the range of about 200 μm to about700 μm, though other thicknesses are possible. In some cases, thethickness T3 may be based on a height of the integrated devices 136. Insome embodiments, a thickness T2 of the first encapsulant 118 and athickness T3 of the second encapsulant 138 may have a ratio T2:T3 thatis between about 1:1 and about 1:8 though other ratios may be used. Insome embodiments, the thickness T2 of the first encapsulant 118, thethickness T3 of the second encapsulant 138, or the thickness ratio T2:T3may be controlled to reduce warping of a package structure, such aspackage structure 150 shown in FIGS. 13A-C. In some cases, thethicknesses T2 or T3, or the ratio T2:T3 may be chosen based on the CTEsof the first encapsulant 118 and/or the second encapsulant 138 to reducewarping in this manner. For example, the encapsulant (e.g., 118 or 138)that has the greatest CTE may be formed thinner than the otherencapsulant to reduce warping effects due to the greater thermalexpansion. As another example, the thicknesses of the first encapsulant118 and the second encapsulant 138 may be chosen such that the absoluteexpansions of the first encapsulant 118 and the second encapsulant 138are more similar at a certain temperature or in a certain range oftemperatures. In some cases, the thickness or material of the firstencapsulant 118 and/or the second encapsulant 138 may be chosen based oncharacteristics (e.g., size, number, composition) of the respectivelyencapsulated components (e.g., the integrated devices 114, thesemiconductor device 116, or the integrated devices 136. For example,the materials of the first encapsulant 118 and/or the second encapsulant138 may be chosen to match or counteract thermal expansion of therespectively encapsulated components.

In FIG. 12, a carrier substrate de-bonding is performed to detach (or“de-bond”) the second carrier substrate 130 from the structure, e.g.,the first encapsulant 118. In accordance with some embodiments, thede-bonding includes projecting a light such as a laser light or an UVlight on the release layer 132 so that the release layer 132 decomposesunder the heat of the light and the second carrier substrate 130 can beremoved. The structure is then flipped over and placed on a carrier 140,which may be, for example, a tape, a frame, or the like. A cleaningprocess (e.g., a wet clean) may be performed to remove residue, such asresidue from the release layer 132.

In FIGS. 13A-C, solder material 142 is formed on the conductive material122, forming a package structure 150, in accordance with someembodiments. The package structure 150 shown in FIG. 13B is similar tothe package structure 150 shown in FIG. 13A, except that thesemiconductor device 116 is covered by the first encapsulant 118 in FIG.13A and the semiconductor device 116 is exposed in FIG. 13B. The packagestructure 150 shown in FIG. 13C is similar to the package structure 150shown in FIG. 13A, except that the semiconductor device 116 is exposedand one or more of the integrated devices 136 are exposed in FIG. 13C.In some cases, leaving the semiconductor device 116 and/or theintegrated devices 136 covered can provide additional protection for thesemiconductor device 116 and/or the integrated devices 136.

In some embodiments, the semiconductor device 116 of FIG. 13B or 13C maybe exposed by performing a planarization process on the firstencapsulant 118 after encapsulating the semiconductor device 116 (seeFIG. 5). The planarization process, which may include a CMP and/or agrinding process, may thin the first encapsulant 118 until the topsurface of the semiconductor device 116 is exposed. The planarizationprocess may also thin the semiconductor device 116, in some embodiments.After planarization, the top surface of the semiconductor device 116 maybe below the surface of the first encapsulant 118, about level with thesurface of the first encapsulant 118, or protrude above the surface ofthe first encapsulant 118. In some embodiments in which thesemiconductor device 116 protrudes from the first encapsulant 118, thefirst encapsulant 118 adjacent the exposed semiconductor device 116 mayhave a thickness T4 that is between about 80% and about 100% of thethickness T1 of the semiconductor device 116. In some cases, exposingthe semiconductor device 116 as shown in Figures FIGS. 13B-C can allowfor improved heat dissipation, a thinner package structure 150, or allowless confined thermal expansion of the semiconductor device 116, whichcan reduce warping. Exposing the semiconductor device 116 can also allowfor subsequent processes to be performed on the top surface of thesemiconductor device 116, such as marking the top surface or attachingother components to the top surface.

FIG. 13C shows the exposed integrated devices 136 as protruding from thesecond encapsulant 138, but in other embodiments the exposed surfaces ofthe integrated devices 136 are coplanar with the second encapsulant 114.In some embodiments, one or more of the integrated devices 136 may beexposed by initially depositing the second encapsulant 138 to athickness that is less than the one or more of the integrated devices136. In some embodiments, the integrated devices 136 of FIG. 13C may beexposed by performing a planarization process and/or an etching processon the second encapsulant 138 after encapsulating the integrated devices136. The etching process may include, for example, a wet etching processand/or a dry etching process. In some cases, exposing integrated devices136 as shown in FIG. 13C can allow for improved heat dissipation, athinner package structure 150, or allow less confined thermal expansionof the integrated devices 136, which can reduce warping. In someembodiments, an integrated device 136 may include a sensor (e.g., alight sensor), and exposing the integrated device 136 exposes the sensorso that it may sense the environment as desired.

Referring to FIGS. 13A-C, the solder material 142 and the conductivematerial 122 together form interconnects 144 that extend through thefirst encapsulant 118 and are electrically connected to theredistribution structure 112 of the package structure 150. Theinterconnects 144 may be used, for example, to connect externalcomponents or structures to the package structure 150. In theembodiments shown in FIGS. 13A-C, the package structure 150 includes afirst encapsulant 118 on a first side of a redistribution structure 112,interconnects 144 extending through the first encapsulant 118 to thefirst side of the redistribution structure 112, and a second encapsulant138 on a second side of the redistribution structure 112. In some cases,the package structure 150 may be considered, for example, aSystem-in-Package (SiP) structure, a fan-out package, or the like.

The solder material 142 is formed on the conductive material 122 to formthe interconnects 144. According to some embodiments, the soldermaterial 142 is formed by initially forming a layer of pre-solder pasteor solder on the conductive material 122. However, any suitable process(e.g., evaporation, electroplating, printing, solder transfer, ballplacement, or the like) may be used to form the pre-solder paste orsolder on the conductive material 122. In some embodiments, the soldermaterial 142 may be micro bumps. However, the solder material 142 mayalso be ball grid array (BGA) connectors, solder balls, metal pillars,controlled collapse chip connection (C4) bumps, electrolessnickel-electroless palladium-immersion gold technique (ENEPIG) formedbumps, or the like. The solder material 142 may include a conductivematerial such as solder, copper, aluminum, gold, nickel, silver,palladium, tin, the like, or a combination thereof. The solder material142 and the conductive material 122 may have the same composition or mayhave different compositions. In some embodiments, a reflow process maybe performed after forming the solder material 142. In otherembodiments, solder material 142 is not used.

In some embodiments, the solder material 142 may protrude a height H3above a top surface of the first encapsulant 118 that is in a rangebetween about 50 μm and about 100 μm, though other heights are possible.The interconnects 144 may have a total height H4 that is in a rangebetween about 100 μm and about 1600 μm, though other heights arepossible. In some cases, the solder material 142 may extend over a topsurface of the first encapsulant 118 and/or below a top surface of thefirst encapsulant 118. In some embodiments, the solder material 142 mayhave a width D3 that is in a range between about 50 μm and about 400 μm,though other widths are possible. The width D3 may be greater than,about the same, or less than the top width D2 of the openings 120 (seeFIG. 6). The interconnects 144 may have an aspect ratio (H4:D3) that isin a range between about 1:8 and about 1:10, though other aspect ratiosare possible. In some cases, the techniques described herein allow forinterconnects 144 of a package structure to be formed having a smallerpitch without increased risk of bridging. This can allow for a greaterdensity of interconnects 144 and thus can allow for greater flexibilityof design, a greater number of interconnects, smaller size, or improvedperformance of a package structure. In some embodiments, theinterconnects 144 may be formed having a pitch P2 that is in a rangebetween about 80 μm and about 1000 μm, though other pitches arepossible. The pitch P2 may be about the same as the pitch P1 of theopenings 120 (see FIG. 6).

In some embodiments, multiple package structures 150 may be formed onthe same carrier (e.g., carriers 102, 130, and/or 140) and thensingulated to form individual package structures 150. FIGS. 14A and 14Billustrate an example singulation process, in accordance with someembodiments. FIG. 14A illustrates package structures 150A and 150Bformed together on a single carrier 140. In FIG. 14B, a singulationprocess is performed by sawing along scribe line regions, e.g., betweenthe package structure 150A and the package structure 150B. The sawingsingulates the package structure 150A from the package structure 150B.In some embodiments, the singulation process is performed after formingthe interconnects 144.

FIGS. 15A, 15B, and 15C show cross-sectional views of a packagestructure 150, in accordance with some embodiments. FIG. 15A shows across-sectional view of a package structure 150, similar to FIG. 14.FIG. 15B shows a schematic cross-sectional view through thecross-section labeled “B-B” in FIG. 15A, and FIG. 15C shows a schematiccross-sectional view through the cross-section labeled “C-C” in FIG.15A. As shown in FIGS. 15A-C, the package structure 150 as describedherein may be an asymmetric dual-sided molded package on a multi-layeredredistribution structure. As shown in FIG. 15B, a package structure 150may include multiple integrated devices 114 (such as IPDs or otherdevices described previously), multiple semiconductor devices 116 (suchas SoC devices or other devices described previously), and multipleinterconnects 144 connected to a first side of the redistributionstructure 112 and surrounded by a first encapsulant 118. In this manner,the interconnects 144 may function as through-mold vias (TMVs) in somecases. The techniques described herein allow the formation ofinterconnects 144 having a finer pitch without increased risk ofbridging or other defects. As shown in FIG. 15C, a package structure 150may include multiple integrated devices 136 (such as SMDs or otherdevices described previously) connected to a second side of theredistribution structure 112 and surrounded by a second encapsulant 138.In some embodiments, the type(s) of components attached to the firstside of the redistribution structure 112 are different from the type(s)of components attached to the second side of the redistributionstructure 112. The package structure 150 and associated cross-sectionalviews shown in FIGS. 15A-C is intended to be an illustrative example,and the package structure 150 shown in FIGS. 15A-C or other packagestructures described herein may have other layouts, other components ordevices, other arrangements of components or devices, components ordevices having other dimensions, other pitches or arrangements ofinterconnects, or the like, and all such variations are consideredwithin the scope of the present disclosure.

Turning to FIG. 16, each singulated package structure 150 may beattached to an external component, in accordance with some embodiments.FIG. 16 shows an example in which a package structure 150 is attached toa package substrate 300. Other external components may include asubstrate, organic core, package, printed circuit board (PCB), or thelike. In some embodiments, the package structure 150 is placed on theexternal component such that the interconnects 144 of the packagestructure 150 are aligned with corresponding conductive features (e.g.,bond pads) of the external component, and then the interconnects 144 arereflowed to attach the package structure 150 to the external component.The interconnects 144 electrically and/or physically couple the packagestructure 150, including metallization layers in the redistributionstructure 112, to the external component.

The package substrate 300 includes a substrate core 302 and bond pads304 over the substrate core 302. The substrate core 302 may be made of asemiconductor material such as silicon, germanium, diamond, or the like.Alternatively, compound materials such as silicon germanium, siliconcarbide, gallium arsenic, indium arsenide, indium phosphide, silicongermanium carbide, gallium arsenic phosphide, gallium indium phosphide,combinations of these, and the like, may also be used. Additionally, thesubstrate core 302 may be a SOI substrate. Generally, an SOI substrateincludes a layer of a semiconductor material such as epitaxial silicon,germanium, silicon germanium, SOI, SGOI, or combinations thereof. Thesubstrate core 302 is, in one alternative embodiment, based on aninsulating core such as a fiberglass reinforced resin core. One examplecore material is fiberglass resin such as FR4. Alternatives for the corematerial include bismaleimide-triazine BT resin, or alternatively, otherPCB materials or films. Build up films such as ABF or other laminatesmay be used for substrate core 302. The substrate core 302 may includeactive and passive devices (not shown). A wide variety of devices suchas transistors, capacitors, resistors, combinations of these, and thelike may be used to generate the structural and functional requirementsof the design for the device stack. The devices may be formed using anysuitable methods.

The substrate core 302 may also include metallization layers and vias(not shown), with the bond pads 304 being physically and/or electricallycoupled to the metallization layers and vias. The metallization layersmay be formed over the active and passive devices and are designed toconnect the various devices to form functional circuitry. Themetallization layers may be formed of alternating layers of dielectric(e.g., low-k dielectric material) and conductive material (e.g., copper)with vias interconnecting the layers of conductive material and may beformed through any suitable process (such as deposition, damascene, dualdamascene, or the like). In some embodiments, the substrate core 302 issubstantially free of active and passive devices.

In some embodiments, the interconnects 144 are reflowed to attach thepackage structure 150 to the bond pads 304. The interconnects 144electrically and/or physically couple the package substrate 300,including metallization layers in the substrate core 302, to the packagestructure 150. The interconnects 144 may have an epoxy flux (not shown)formed thereon before they are reflowed with at least some of the epoxyportion of the epoxy flux remaining after the package structure 150 isattached to the package substrate 300. This remaining epoxy portion mayact as an underfill to reduce stress and protect the joints resultingfrom the reflowing the interconnects 144. In some embodiments, anunderfill 308 may be formed between the package structure 150 and thepackage substrate 300 and surrounding the interconnects 144. Theunderfill 308 may be formed by a capillary flow process after thepackage structure 150 is attached, or it may be formed by a suitabledeposition method before the package structure 150 is attached.

FIGS. 17 through 26A-B illustrate cross-sectional views of intermediatesteps in the formation of a package structure 250 (see FIG. 25), inaccordance with some embodiments. The package structure 250 is similarto the package structure 150 except the conductive material (e.g., firstconductive material 222) of the interconnects (e.g., interconnects 244)is formed prior to encapsulation by the first encapsulant 118. Somefeatures and steps of forming the package structure 250 may be similarto features or steps of forming the package structure 150 as describedin FIGS. 1 through 16, and as such, some of these similar details may beomitted in the following description.

Turning to FIG. 17, a redistribution structure 112 having attachedintegrated devices 114 and a semiconductor device 116 is shown, inaccordance with some embodiments. The structure shown in FIG. 17 may besimilar to the structure shown previously in FIG. 4 and may be formed ina similar manner as described for FIGS. 1-4.

In FIG. 18, first conductive material 222 is formed on theredistribution structure 112, in accordance with some embodiments. Thefirst conductive material 222 makes physical and electrical contact withthe topmost metallization pattern (e.g., metallization pattern 111) orUBMs (if present) of the redistribution structure 112. According to someembodiments, the first conductive material 222 is formed by initiallyforming a layer of pre-solder paste or solder on the redistributionstructure 112. However, any suitable process (e.g., evaporation,electroplating, printing, solder transfer, ball placement, or the like)may be used to form the pre-solder paste or solder on the redistributionstructure 112. In some embodiments, the first conductive material 222may be micro bumps. However, the first conductive material 222 may alsobe ball grid array (BGA) connectors, solder balls, metal pillars,controlled collapse chip connection (C4) bumps, electrolessnickel-electroless palladium-immersion gold technique (ENEPIG) formedbumps, or the like. The first conductive material 222 may include aconductive material such as solder, copper, aluminum, gold, nickel,silver, palladium, tin, the like, or a combination thereof. In someembodiments, a reflow process may be performed after forming the firstconductive material 222.

In some embodiments, the first conductive material 222 may have a heightH5 that is in a range between about 80 μm and about 250 μm, though otherheights are possible. In some embodiments, the first conductive material222 may have a bottom width D4 that is in a range between about 100 μmand about 450 μm, though other widths are possible. The first conductivematerial 222 may have a largest width D5 that is in a range betweenabout 120 μm and about 600 μm, though other widths are possible. In someembodiments, the bottom width D4 may be about the same as the largestwidth D5, or the bottom width D4 may be smaller than the largest widthD5. In some embodiments, the ratio of D4:D5 may be between about 0.75:1and about 0.85:1, though other ratios are possible. In some embodiments,the first conductive material 222 may be formed having a pitch P3 thatis in a range between about 150 μm and about 700 μm, though otherpitches are possible.

In FIG. 19, a first encapsulant 118 is formed over the redistributionstructure 112 to encapsulate the first conductive material 222, theintegrated devices 114, and the semiconductor device 116, in accordancewith some embodiments. The first encapsulant 118 may be a materialsimilar to that described previously for FIG. 5, and may be formed in asimilar manner. In some embodiments, the first encapsulant 118 isplanarized (e.g., using a CMP and/or grinding process), which may exposeat least one semiconductor device 116. FIGS. 19 through 25 illustrate anembodiment in which the semiconductor device 116 is exposed, but inother embodiments the semiconductor device 116 may remain covered by thefirst encapsulant 118. In some embodiments, the ratio of the height H5of the first conductive material 222 to the thickness T2 of the firstencapsulant 118 (e.g., the ratio H5:T2) may be between about 0.5:1 andabout 0.7:1, though other ratios are possible. In some embodiments, theratio of the bottom width D4 of the first conductive material 222 to thethickness T2 of the first encapsulant 118 (e.g., the ratio D4:T2) may bebetween about 0.4:1 and about 0.56:1. In some cases, forming the firstconductive material 222 having a smaller size (e.g., smaller height H5,smaller bottom width D4, and/or smaller largest width D5) may allow thepitch P3 of the first conductive material 222 to be smaller, and thusallow the pitch P5 of the interconnects 244 (see FIG. 25) to be smaller.

In FIG. 20, openings 220 are formed in the first encapsulant 118 toexpose the first conductive material 222, in accordance with someembodiments. In some embodiments, the openings 120 may be formed using alaser drilling process, which may be similar to the laser drillingprocess described previously for FIG. 6. The laser drilling process mayinclude an energy in a range between about 0.1 mJ and about 0.2 mJ, insome embodiments. Other energies may be used. In some embodiments, acleaning process (e.g., a wet clean) may be performed after the laserdrilling process to remove residue. Other techniques may be used forforming the openings 220.

The openings 220 may have substantially vertical profile or may have atapered profile, as shown in FIG. 20. For example, in some embodiments,the openings 220 may have a bottom width D6 that is about the same asthe top width D7, or the bottom width D6 may be smaller than the topwidth D7. In some embodiments, the openings 220 may have a bottom widthD6 that is in a range between about 50 μm and about 500 μm and a topwidth D7 that is in a range between about 55 μm and about 550 μm, thoughother widths are possible. In some embodiments, the ratio of D6:D7 maybe between about 1:1.1 and about 1:1.3, though other ratios arepossible. In some cases, forming the openings 220 with a vertical ortapered profile may allow for improved filling of the openings 220 bysecond conductive material 224 (see FIG. 21). In some embodiments, thebottom width D7 is less than or about equal to the largest width D5 ofthe first conductive material 222. In some cases, a larger bottom widthD7 can expose more surface area of the first conductive material 222 andreduce resistance between the conductive material and the subsequentlyformed second conductive material 224 (see FIGS. 21A-B).

In some embodiments, the openings 220 may have a height H6 that is in arange between about 50 μm and about 500 μm, though other heights arepossible. The openings 220 may have an aspect ratio D6:H6 that is in arange between about 0.4:1 and about 1:1, though other aspect ratios arepossible. In some embodiments, the ratio of the height H6 of theopenings 220 to the thickness T2 of the first encapsulant 118 (e.g., theratio H6:T2) may be between about 0.5:1 and about 0.7:1, though otherratios are possible. In some cases, forming the openings 220 with asmaller top width D7 or a taller aspect ratio D6:H6 (e.g., having arelatively larger H6) can allow for the openings 220 to be formed havinga smaller pitch P4. In some embodiments, the openings 220 may be formedhaving a pitch P4 that is in a range between about 150 μm and about 500μm, though other pitches are possible. In this manner, the subsequentlyformed interconnects 244 (see FIG. 25) may be formed having a smallerwidth or a smaller pitch, and thus the techniques herein can allow for agreater density of interconnects 244 to be formed. Other widths,dimensions, aspect ratios, or profiles are possible.

Turning to FIGS. 21A and 21B, a second conductive material 224 is formedin the openings 220, in accordance with some embodiments. FIG. 21Aillustrates an embodiment in which the second conductive material 224comprises a conductive paste, and FIG. 21B illustrates an embodiment inwhich the second conductive material 224 comprises solder balls.Subsequent figures illustrate structures formed from the embodiment ofFIG. 21A, though similar structures may be formed from the embodiment ofFIG. 21B or other embodiments not specifically shown. The secondconductive material 224 in the openings 220 makes physical andelectrical contact with the first conductive material 222. As such, thefirst conductive material 222 and the second conductive material 224together form a single interconnect stack 226 that extends partially orfully through the first encapsulant 118 to connect to the redistributionstructure 112. In some cases, the interconnect stacks 226 may beconsidered through-molding vias (TMVs).

A top surface of the second conductive material 224 may be below a topsurface of the first encapsulant 118, may be about level with a topsurface of the first encapsulant 118, or may protrude above a topsurface of the first encapsulant 118. For example, a top surface of thesecond conductive material 224 may be below a top surface of the firstencapsulant 118 a distance in a range between about 30 μm and about 50μm, or a top surface of the second conductive material 224 may be abovea top surface of the first encapsulant 118 a distance in a range betweenabout 30 μm and about 50 μm. Other distances are possible.

In some embodiments, the second conductive material 224 may have aheight H7 that is in a range between about 50 μm and about 300 μm,though other heights are possible. In this manner, the total height ofthe interconnect stacks 226 may be about H5+H7. In some embodiments, theratio of the height H7 of the second conductive material 224 to theheight H5 of the first conductive material 222 (e.g., the ratio H7:H5)may be between about 0.7:0.3 and about 0.5:0.5, though other ratios arepossible. In some embodiments, the ratio of the height H7 of the secondconductive material 224 to the thickness T2 of the first encapsulant 118(e.g., the ratio H7:T2) may be between about 0.5:1 and about 0.7:1,though other ratios are possible. In some embodiments, the ratio of themass of a second conductive material 224 to the mass of the firstconductive material 222 may be between about 1:1 and about 1:1.5, thoughother ratios are possible.

FIG. 21A illustrates an embodiment in which the second conductivematerial 224 comprises a conductive paste such as solder paste, silverpaste or adhesive, the like, or combinations thereof. The secondconductive material 224 may be deposited using, for example, a suitabledispensing process or printing process. A reflow may be performed afterdepositing the second conductive material 224. The second conductivematerial 224 may be a similar material as the conductive material 122described previously, or may be different material. The top surface ofthe second conductive material 224 may be concave, substantially flat,convex, or have another shape.

FIG. 21B illustrates an embodiment in which the second conductivematerial 224 comprises solder balls or the like, such as solder bumps,micro bumps, ball grid array (BGA) connectors, metal pillars, controlledcollapse chip connection (C4) bumps, electroless nickel-electrolesspalladium-immersion gold technique (ENEPIG) formed bumps, or the like.The first conductive material 222 may include a conductive material suchas solder, copper, aluminum, gold, nickel, silver, palladium, tin, thelike, or a combination thereof. In some embodiments, a reflow processmay be performed after forming the first conductive material 222.

In FIG. 22, a carrier substrate de-bonding is performed to detach (or“de-bond”) the first carrier substrate 102 from the redistributionstructure, in accordance with some embodiments. The structure may thenflipped be over and attached to a second carrier substrate 130. Arelease layer 132 may be formed on the second carrier substrate 130 tofacilitate attachment of the structure to the second carrier substrate130. The detaching of the first carrier substrate 102 and the attachingto the second carrier substrate 130 may be similar to the stepsdescribed previously for FIG. 8.

In FIG. 23, conductive connectors 134 are formed on the redistributionstructure 112, and integrated devices 136 are attached to the conductiveconnectors 134, in accordance with some embodiments. The conductiveconnectors 134 may be similar to the conductive connectors 134 describedpreviously for FIG. 9, and may be formed in a similar manner. Theintegrated devices 136 may be similar to the integrated devices 136described previously for FIG. 10, and may be attached in a similarmanner.

In FIG. 24, a second encapsulant 138 is formed over the redistributionstructure 112 to encapsulate the integrated devices 136, in accordancewith some embodiments. The second encapsulant 138 may be a materialsimilar to that described previously for FIG. 11, and may be formed in asimilar manner. In some embodiments, the second encapsulant 138 isplanarized (e.g., using a CMP and/or grinding process), which may exposeat least one integrated device 136.

In FIG. 25, a carrier substrate de-bonding is performed to detach (or“de-bond”) the second carrier substrate 130 from the structure, e.g.,the first encapsulant 118. The structure may then flipped over andplaced on a carrier 140, which may be, for example, a tape, a frame, orthe like. The detaching of the second carrier substrate 130 and theattaching to the carrier 140 may be similar to the steps describedpreviously for FIG. 12. After attaching the structure to the carrier140, a solder material 242 may be formed on the interconnect stacks 226to form interconnects 244. In this manner, a package structure 250 maybe formed, in accordance with some embodiments.

The solder material 242, the first conductive material 222, and thesecond conductive material 224 together form interconnects 244 thatextend through the first encapsulant 118 and are electrically connectedto the redistribution structure 112 of the package structure 250. In theembodiment shown in FIG. 25, the package structure 250 includes a firstencapsulant 118 on a first side of a redistribution structure 112,interconnects 244 extending through the first encapsulant 118 to thefirst side of the redistribution structure 112, and a second encapsulant138 on a second side of the redistribution structure 112. The soldermaterial 242 may be a similar material as the solder material 142described previously, and may be formed in a similar manner. The soldermaterial 242, the conductive material 122, and/or the second conductivematerial 224 have the same composition or may have differentcompositions. In some embodiments, a reflow process may be performedafter forming the solder material 242. In other embodiments, soldermaterial 242 is not used.

In some embodiments, the solder material 242 may protrude a height H8above a top surface of the first encapsulant 118 that is in a rangebetween about 50 μm and about 100 μm, though other heights are possible.The interconnects 244 may have a total height H9 that is in a rangebetween about 150 μm and about 1050 μm, though other heights arepossible. In some cases, the solder material 242 may extend over a topsurface of the first encapsulant 118 and/or below a top surface of thefirst encapsulant 118. In some embodiments, the solder material 242 mayhave a width D8 that is in a range between about 80 μm and about 450 μm,though other widths are possible. The width D8 may be greater than,about the same, or less than the top width D7 of the openings 220 (seeFIG. 20). The interconnects 244 may have an aspect ratio (e.g., H9:D5)that is in a range between about 1.5:1 and about 2:1, though otheraspect ratios are possible. In some cases, the techniques describedherein allow for interconnects 244 of a package structure to be formedhaving a smaller pitch without increased risk of bridging. This canallow for a greater density of interconnects 244 and thus can allow forgreater flexibility of design, a greater number of interconnects,smaller size, or improved performance of a package structure. In someembodiments, the interconnects 244 may be formed having a pitch P5 thatis in a range between about 150 μm and about 700 μm, though otherpitches are possible. The pitch P5 may be about the same as the pitch P4of the openings 220 (see FIG. 20). In some embodiments, multiple packagestructures 250 may be formed on the same carrier (e.g., carriers 102,130, and/or 140) and then singulated to form individual packagestructures 250. In this manner, a package structure 250 may be formedhaving interconnects 244 comprising an interconnect stack 226 thatextends through the first encapsulant 118 to connect to a redistributionstructure 112.

Turning to FIGS. 26A-B, each singulated package structure 250 may beattached to an external component, in accordance with some embodiments.FIGS. 26A-B shows examples in which a package structure 250 is attachedto a package substrate 300, which may be similar to the packagesubstrate 300 shown previously for FIG. 16. For example, packagesubstrate 300 may include a substrate core 302 and bond pads 304 overthe substrate core 302. FIG. 26A illustrates an embodiment in which thesecond conductive material 224 of the interconnects 244 comprises aconductive paste (see FIG. 21A), and FIG. 26B illustrates an embodimentin which the second conductive material 224 of the interconnects 244comprises solder balls (see FIG. 21B). Additionally, FIG. 26Billustrates an embodiment in which the solder material 242 is not used,but a solder material 242 may be used or not used in either embodimentof FIGS. 26A-B, or in other embodiments discussed herein.

In some embodiments, the package structure 150 is placed on the packagesubstrate 300 such that the interconnects 244 of the package structure150 are aligned with the bond pads 304 of the package substrate, andthen the interconnects 244 are reflowed to attach the package structure150 to the package substrate 300. The interconnects 244 electricallyand/or physically couple the package structure 150, includingmetallization layers in the redistribution structure 112, to the packagesubstrate 300. In some embodiments, an underfill 308 may be formedbetween the package structure 150 and the package substrate 300 andsurrounding the interconnects 144.

Referring to FIG. 26A, in some embodiments, the solder material 242 isfirst formed on the second conductive material 224 of the interconnects244 (see FIG. 25), and then the solder material 242 is placed on thebond pads 304 of the package substrate 300 and reflowed. In otherembodiments, the solder material 242 is first formed on the bond pads304 of the package substrate 300, and then the second conductivematerial 224 (e.g., a conductive paste) is placed on the solder material242 and reflowed. Referring to FIG. 26B, in some embodiments, the secondconductive material 224 (e.g., solder balls) is first formed on thefirst conductive material 222 of the interconnects 244 (see FIG. 21B),and then the second conductive material 224 is placed on the bond pads304 of the package substrate 300 and reflowed. In other embodiments, thesecond conductive material 224 is first formed on the bond pads 304 ofthe package substrate 300, and then the first conductive material 222 isplaced on the second conductive material 224 and reflowed.

According to embodiments disclosed herein, System-in-Package (SiP)devices may be fabricated using heterogeneous devices and asymmetricdual-side molding on a multi-layered redistribution layers (RDL)structure, using interconnects extending through the molding of one sideto connect to the RDL structure. The interconnects may be formed asthrough-molding vias (TMVs). The embodiments disclosed herein can allowfor interconnects to be formed having a finer pitch, thus increasingconnection density and improved device performance. For example, thenumber or density of input/output connections of a package structure maybe increased, improving performance of the package structure orconnected devices. The interconnects may be formed having a finer pitchwithout increased risk of bridging or other defects, and thus yield maybe improved. In some embodiments, each interconnect may be formed as asingle interconnect structure comprising, e.g., conductive paste. Inother embodiments, each interconnects may be formed as an interconnectstructure comprising a stack of a conductive materials, such as a solderball on another solder ball or as conductive paste formed on a solderball. Additionally, the techniques described herein allow forflexibility of molding material choices (e.g., the CTEs of the moldingon each side) and molding thickness (e.g., the thickness of the moldingon each side), which can be controlled to reduce warping of the finaldevice.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

In accordance with an embodiment, a method includes forming aredistribution structure including metallization patterns; attaching asemiconductor device to a first side of the redistribution structure;encapsulating the semiconductor device with a first encapsulant; formingopenings in the first encapsulant, the openings exposing a metallizationpattern of the redistribution structure; forming a conductive materialin the openings, comprising at least partially filling the openings witha conductive paste; after forming the conductive material, attachingintegrated devices to a second side of the redistribution structure;encapsulating the integrated devices with a second encapsulant; andafter encapsulating the integrated devices, forming a pre-soldermaterial on the conductive material. In an embodiment, a coefficient ofthermal expansion (CTE) of the first encapsulant is different from a CTEof the second encapsulant. In an embodiment, after encapsulating theintegrated devices, the integrated devices protrude from the secondencapsulant. In an embodiment, forming openings in the first encapsulantincludes performing a laser drilling process. In an embodiment, theconductive paste is a silver paste. In an embodiment, the integrateddevices include surface-mount devices (SMDs). In an embodiment, themethod includes performing a planarization process on the firstencapsulant to expose the semiconductor device. In an embodiment,forming openings in the first encapsulant includes performing a laserdrilling process.

In accordance with an embodiment, a method includes forming aredistribution structure including a first metallization pattern and asecond metallization pattern; connecting a first set of integrateddevices to the first metallization pattern; forming conductiveconnectors on the first metallization pattern; depositing a firstmolding material over the first metallization pattern, the first set ofintegrated devices, and the conductive connectors; forming openings inthe first molding material using a laser drilling process, wherein eachopening exposes a conductive connector; forming conductive materialwithin each opening and on each conductive connector; connecting asecond set of integrated devices to the second metallization pattern;and depositing a second molding material over the second metallizationpattern and the second set of integrated devices. In an embodiment,forming the conductive material includes depositing a solder pastewithin each opening. In an embodiment, forming the conductive materialincludes placing a solder ball within each opening. In an embodiment,after depositing the second molding material, at least one integrateddevice of the second set of integrated devices is exposed. In anembodiment, the conductive connectors include solder balls. In anembodiment, the first molding material has a different composition thanthe second molding material.

In accordance with an embodiment, a device includes a redistributionstructure including a first side and a second side; first devicesattached to the first side of the redistribution structure; a firstmolding material on the first side of the redistribution structure andsurrounding the first devices; openings in the first molding material;conductive interconnects in the openings, wherein each conductiveinterconnect is electrically connected to the first side of theredistribution structure, wherein each conductive interconnect includessolder paste that at least partially fills a respective opening; seconddevices attached to the second side of the redistribution structure; anda second molding material on the second side of the redistributionstructure and surrounding the second devices, wherein the second moldingmaterial is different than the first molding material. In an embodiment,each conductive interconnect has an aspect ratio in the range between1:8 and 1:10. In an embodiment, the conductive interconnects have apitch in the range between 100 μm and 250 μm. In an embodiment, eachconductive interconnect includes solder balls, wherein each solder ballis within a respective opening, wherein each solder ball physically andelectrically contacts the first side of the first redistributionstructure, wherein the solder paste of the conductive interconnects isdisposed on each solder balls. In an embodiment, the device includes apre-solder material on the conductive interconnects. In an embodiment, aratio of a thickness of the first molding material to a thickness of thesecond molding material is in the range between 1:1 and 1:8.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a redistributionstructure comprising a plurality of metallization patterns; attaching asemiconductor device to a first side of the redistribution structure;forming a plurality of solder regions on the first side of theredistribution structure, wherein the solder regions are connected to ametallization pattern of the redistribution structure; encapsulating thesemiconductor device and the solder regions with a first encapsulant;forming a plurality of openings in the first encapsulant, the openingsexposing respective solder regions; forming a conductive material in theopenings, comprising at least partially filling the openings with aconductive paste; after forming the conductive material, attachingintegrated devices to a second side of the redistribution structure;encapsulating the integrated devices with a second encapsulant; andafter encapsulating the integrated devices, forming a pre-soldermaterial on the conductive material.
 2. The method of claim 1, wherein acoefficient of thermal expansion (CTE) of the first encapsulant isdifferent from a CTE of the second encapsulant.
 3. The method of claim1, wherein, after encapsulating the integrated devices, the integrateddevices protrude from the second encapsulant.
 4. The method of claim 1,wherein forming openings in the first encapsulant comprises performing alaser drilling process.
 5. The method of claim 1, wherein the conductivepaste is a silver paste.
 6. The method of claim 1, wherein theintegrated devices comprise surface-mount devices (SMDs).
 7. The methodof claim 1, further comprising performing a planarization process on thefirst encapsulant to expose the semiconductor device.
 8. The method ofclaim 1, wherein the solder regions comprise solder balls.
 9. The methodof claim 1, wherein the solder regions comprise pre-solder paste.
 10. Amethod comprising: forming a redistribution structure comprising a firstmetallization pattern and a second metallization pattern; connecting afirst set of integrated devices to the first metallization pattern;forming conductive connectors on the first metallization pattern,wherein the conductive connectors comprise solder balls; depositing afirst molding material over the first metallization pattern, the firstset of integrated devices, and the conductive connectors; formingopenings in the first molding material using a laser drilling process,wherein each opening exposes a conductive connector; forming conductivematerial within each opening and on each conductive connector;connecting a second set of integrated devices to the secondmetallization pattern; and depositing a second molding material over thesecond metallization pattern and the second set of integrated devices.11. The method of claim 10, wherein forming the conductive materialcomprises depositing a solder paste within each opening.
 12. The methodof claim 10, wherein forming the conductive material comprises placing asolder ball within each opening.
 13. The method of claim 10, whereinafter depositing the second molding material, at least one integrateddevice of the second set of integrated devices is exposed.
 14. Themethod of claim 10, wherein the first molding material has a differentcomposition than the second molding material.
 15. The method of claim10, wherein before forming openings in the first molding material, atleast one integrated device of the first set of integrated devices isexposed.
 16. A device comprising: a redistribution structure comprisinga first side and a second side; a first plurality of devices attached tothe first side of the redistribution structure; a first molding materialon the first side of the redistribution structure and surrounding thefirst plurality of devices; a plurality of openings in the first moldingmaterial; a plurality of conductive interconnects in the plurality ofopenings, wherein each conductive interconnect of the plurality ofconductive interconnects is electrically connected to the first side ofthe redistribution structure, wherein each conductive interconnect ofthe plurality of conductive interconnects comprises solder paste that atleast partially fills a respective opening of the plurality of openings,wherein the plurality of conductive interconnects comprises a pluralityof solder balls, wherein each solder ball of the plurality of solderballs is within a respective opening of the plurality of openings,wherein each solder ball of the plurality of solder balls physically andelectrically contacts the first side of the first redistributionstructure, wherein the solder paste of the plurality of conductiveinterconnects is disposed on each solder ball of the plurality of solderballs; a second plurality of devices attached to the second side of theredistribution structure; and a second molding material on the secondside of the redistribution structure and surrounding the secondplurality of devices, wherein the second molding material is differentthan the first molding material.
 17. The device of claim 16, whereineach conductive interconnect has an aspect ratio in the range between1:8 and 1:10.
 18. The device of claim 16, wherein the plurality ofconductive interconnects have a pitch in the range between 100 μm and250 μm.
 19. The device of claim 16, further comprising a pre-soldermaterial on the plurality of conductive interconnects.
 20. The device ofclaim 16, wherein a ratio of a thickness of the first molding materialto a thickness of the second molding material is in the range between1:1 and 1:8.